Behavioral model analysis of active harmonic load-pull measurements

This paper outlines the formulation of a mixing based behavioral model, capable of capturing the nonlinear response of microwave transistors to fundamental and harmonic load pull effects for use in Computer Aided Design tools. The key to the model formulation was the experimental identification of the dominating mixing terms. The model is able to accurately compute the voltage and current waveforms present at a Transistors Terminals. The formulation lends itself to economical use of measured data, reducing data storage required within the CAD environment. In this paper the modeling approach has been demonstrated on a 10 × 75 μm GaAs HEMT operating at 9 GHz.