Title :
A new approach for high-frequency FET noise modeling
Author :
Khosravi, R. ; Abdipour, A.
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
Based on the active line concept, a novel approach for calculating the noise performance of MM-wave high frequency FETs is proposed. Three coupled lines, excited by noise sources distributed on them, as a new noise modeling of microwave FETs is discussed. Some results using this approach have presented for a microwave MESFET
Keywords :
Schottky gate field effect transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; transmission line theory; HF FET noise modeling; MM-wave FETs; active line concept; microwave FETs; microwave MESFET; noise performance; Active noise reduction; Circuit noise; FETs; Frequency; Microwave devices; Performance analysis; Radar applications; Signal analysis; Transmission line matrix methods; Voltage;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926034
