DocumentCode
3136600
Title
Dielectric breakdown, reliability and defect density of (Ba/sub 0.7/Sr/sub 0.3/)TiO/sub 3/ (BST)
Author
Reisinger, H. ; Wendt, H. ; Beitel, G. ; Fritsch, E.
Author_Institution
Semicond. Group, Siemens Corp. Res. & Dev., Munchen, Germany
fYear
1998
fDate
9-11 June 1998
Firstpage
58
Lastpage
59
Abstract
A thorough electrical characterization of BST with focus on lifetime, large device relevant areas (2/sub c/m/sup 2/) and defect density was carried out. As a result we think that BST with an SiO/sub 2/ equivalent thickness t/sub oxeq/ of 5 Å is able to meet the requirements of Gb DRAMs with ±1 V operating voltage.
Keywords
DRAM chips; barium compounds; dielectric thin films; electric breakdown; leakage currents; noncrystalline defects; reliability; strontium compounds; (Ba/sub 0.7/Sr/sub 0.3/)TiO/sub 3/; -1 V; 1 V; 5 A; BST; Gb DRAMs; defect density; dielectric breakdown; electrical characterization; gigabit dynamic RAM; lifetime; oxide equivalent thickness; reliability; Binary search trees; Capacitors; Dielectric breakdown; Dielectric thin films; Electrodes; Leakage current; Random access memory; Strontium; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689198
Filename
689198
Link To Document