DocumentCode :
3136607
Title :
Advantageous of electrode loading of a FET in mixer application
Author :
Moradi, G. ; Abdipour, A. ; Ghorbani, A.
Author_Institution :
Dept. of Electr. Eng., Amir-Kabir Univ. of Technol., Tehran, Iran
fYear :
2000
fDate :
2000
Firstpage :
1163
Lastpage :
1166
Abstract :
The influence of the loading of the FET electrodes, on signal and noise performances of the device in a mixer application is studied. It is shown that exciting the input signal from one end of the gate and extracting the output signal from the opposite ends of the gate can improve the device characteristics, provided that the two remaining ends of the gate and the drain are properly loaded. This structure makes the lines (i.e. the gate and the drain electrodes) to be matched with the loads. Therefore it leads to a traveling wave FET mixer, which is a good candidate for high power MM-wave application
Keywords :
circuit noise; millimetre wave field effect transistors; millimetre wave mixers; semiconductor device models; semiconductor device noise; transmission line theory; FET electrode loading; distributed modelling; high power MM-wave application; mixer application; noise performance; signal performance; sliced modelling; traveling wave FET mixer; Distributed control; Electrodes; FETs; Frequency; Linear circuits; Power transmission lines; RF signals; Signal analysis; Signal generators; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.926037
Filename :
926037
Link To Document :
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