Field Effect Transistor on Hetero-Structure GaN/InxGa1-xN

Progress in the design of field effect transistor on hetero-structure GaN/In_xGa_1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/In_xGa_1-xN hetero-structure is prepared to have both thickness ~50 mum and high specific resistance. The horizontal FET structure is prepared in order to achieve 1 mum gate length and 17 mum gate width. The technological methods used in the preparation of the FET structure are described. The static current-voltage characteristics are determined. It is found that there is gate threshold voltage that varies in range 2.1-2.4 V for n-channel MOS and in range -3.3--3.4 V for p-channel MOS . Also it is found that the drain current varies in the range ~7 muA if the drain voltage is 5 V and the operational point is chosen to be 3.5 V of the gate voltage. Both parameters the dynamic channel resistance and the amplification factor are determined as well