Title :
Channel size dependence of dopant-induced threshold voltage fluctuation [deep submicron MOSFETs]
Author_Institution :
Silicon Syst. Res. Lab., NEC, Kanagawa, Japan
Abstract :
L and W dependence of dopant-induced V/sub TH/ fluctuation is analyzed using a newly proposed quasi-resistance method. It is revealed that the (LW)/sup -1/2/ relationship originates from a V/sub TH/ averaging effect, caused by the subthreshold current. The relationship is expected to hold down to 0.1 /spl mu/m generation.
Keywords :
MOS integrated circuits; MOSFET; VLSI; fluctuations; semiconductor device models; 0.1 micron; LV MOS VLSI; channel size dependence; deep submicron MOSFETs; dopant-induced threshold voltage fluctuation; percolation model; quasi-resistance method; subthreshold current; Circuit synthesis; Equations; FETs; Fluctuations; Low voltage; National electric code; Semiconductor process modeling; Silicon; Subthreshold current; Threshold voltage;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689204
