DocumentCode
3137748
Title
Channel size dependence of dopant-induced threshold voltage fluctuation [deep submicron MOSFETs]
Author
Takeuchi, K.
Author_Institution
Silicon Syst. Res. Lab., NEC, Kanagawa, Japan
fYear
1998
fDate
9-11 June 1998
Firstpage
72
Lastpage
73
Abstract
L and W dependence of dopant-induced V/sub TH/ fluctuation is analyzed using a newly proposed quasi-resistance method. It is revealed that the (LW)/sup -1/2/ relationship originates from a V/sub TH/ averaging effect, caused by the subthreshold current. The relationship is expected to hold down to 0.1 /spl mu/m generation.
Keywords
MOS integrated circuits; MOSFET; VLSI; fluctuations; semiconductor device models; 0.1 micron; LV MOS VLSI; channel size dependence; deep submicron MOSFETs; dopant-induced threshold voltage fluctuation; percolation model; quasi-resistance method; subthreshold current; Circuit synthesis; Equations; FETs; Fluctuations; Low voltage; National electric code; Semiconductor process modeling; Silicon; Subthreshold current; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689204
Filename
689204
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