Title :
Transmission electron microscopy determination of quantum dot profile
Author :
Liao, X.Z. ; Zou, J. ; Duan, X.F. ; Cockayne, D.J.H. ; Leon, R. ; Lobo, C.
Author_Institution :
Sydney Univ., NSW, Australia
Abstract :
Investigation of the morphology of buried and unburied Inx Ga1-xAs/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped
Keywords :
III-V semiconductors; buried layers; gallium arsenide; indium compounds; interface structure; semiconductor quantum dots; transmission electron microscopy; InGaAs-GaAs; [001] on-zone bright-field technique; buried InxGa1-xAs/GaAs quantum dots; cross-sectional TEM; image simulation; lens-shaped QDs; morphology; quantum dot profile; transmission electron microscopy; unburied InxGa1-xAs/GaAs quantum dots; Analytical models; Capacitive sensors; Diffraction; Gallium arsenide; Lenses; Optical materials; Quantum dots; Shape; Transmission electron microscopy; US Department of Transportation;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791594
