Reduction of threshold current density in InGaN-AlGaN quantum wire and quantum dot lasers due to excitonic transitions

Author

Huang, W. ; Jain, F.

Author_Institution

Dept. of Electr. Eng., Bucknell Univ., Lewisburg, PA, USA

fYear

1999

fDate

1999

Firstpage

109

Lastpage

111

Abstract

This paper presents computations showing the effect of excitonic transitions in reducing the threshold current density J_th in the presence of a large dislocation density in InGaN-AlGaN quantum wire and dot lasers. The effect of reduction in lateral and transverse dimensions on the threshold current density is also shown. A comparison of the computed values of J_th for quantum wire and dot lasers with experimental data on InGaN-AlGaN quantum well lasers, as reported by Nakamura et al., is also presented

Keywords

III-V semiconductors; aluminium compounds; current density; dislocation density; excitons; gallium compounds; indium compounds; interface states; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum dots; semiconductor quantum wires; wide band gap semiconductors; InGaN-AlGaN; InGaN-AlGaN quantum dot lasers; InGaN-AlGaN quantum wire lasers; excitonic transitions; large dislocation density; lateral dimensions; threshold current density; transverse dimensions; Absorption; Excitons; Laser transitions; Quantum computing; Quantum dot lasers; Quantum dots; Quantum well lasers; Threshold current; US Department of Transportation; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791595

Filename

791595