DocumentCode :
3137899
Title :
Series resistance and its effect on the maximum output power of 1.5 μm strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers
Author :
Simmons, J.G. ; Elenkrig, B.B. ; Smetona, S. ; Takasaki, B. ; Evans, J.D.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fYear :
1999
fDate :
1999
Firstpage :
120
Lastpage :
123
Abstract :
The series resistance of InGaAsP/InP Multiple Quantum Well ridge waveguide laser diodes is investigated experimentally over a wide temperature range for both Fabry-Perot and Distributed Feedback type lasers. From the temperature dependence of the series resistance is found that it is defined mostly by the resistance of heterobarriers, although the semiconductor bulk resistance is also found to be a substantial part of ridge waveguide laser series resistance. The effect of the laser series resistance on its performance characteristics is investigated. The theoretically predicted strong correlation between the series resistance and laser maximum operating power is confirmed experimentally. The ways of reducing of series resistance are discussed
Keywords :
III-V semiconductors; distributed feedback lasers; electrical resistivity; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; semiconductor device measurement; waveguide lasers; Fabry-Perot type lasers; InGaAsP-InP; InGaAsP/InP; MQW ridge waveguide laser diodes; distributed feedback type lasers; heterobarriers; laser maximum operating power; maximum output power; performance characteristics; ridge waveguide laser series resistance; semiconductor bulk resistance; series resistance; strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers; temperature dependence; Diode lasers; Distributed feedback devices; Indium phosphide; Laser feedback; Laser theory; Power generation; Semiconductor lasers; Semiconductor waveguides; Temperature distribution; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
Type :
conf
DOI :
10.1109/COMMAD.1998.791598
Filename :
791598
Link To Document :
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