Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion

Author

Liu, Xingquan ; Li, Ning ; Chen, Xiaoshuang ; Lu, Wei ; Xu, Wenlan ; Yuan, Xianzhang ; Li, Na ; Shen, S.C. ; Yuan, Shu ; Tan, Hark Hoe ; Jagadish, C.

Author_Institution

Inst. of Tech. Phys., Acad. Sinica, Shanghai, China

fYear

1999

fDate

1999

Firstpage

128

Lastpage

130

Abstract

Thermal interdiffusion is used to shift peak response wavelength of the quantum well infrared photodetectors (QWIP). A maximum of 0.7 μm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red shift is attributed to Si-dopant enhanced intermixing. Both the dark current and responsivity of QWIP are decreased for 900°C annealed sample than as-grown one, which is attributed to decrease of electron concentration in the quantum well due to Si-dopant outdiffusion

Keywords

III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; gallium arsenide; infrared detectors; optical tuning; photodetectors; quantum well devices; red shift; 900 C; GaAs-AlGaAs; GaAs/AlGaAs quantum well IR photodetector; Si dopant outdiffusion; annealing; dark current; electron concentration; error function potential profile; intermixing; red shift; responsivity; thermal interdiffusion; wavelength tuning; Dark current; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photodetectors; Physics; Quantum wells; Rapid thermal annealing; Space technology; Thermal engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791600

Filename

791600