Title :
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Author :
Liu, Xingquan ; Li, Ning ; Chen, Xiaoshuang ; Lu, Wei ; Xu, Wenlan ; Yuan, Xianzhang ; Li, Na ; Shen, S.C. ; Yuan, Shu ; Tan, Hark Hoe ; Jagadish, C.
Author_Institution :
Inst. of Tech. Phys., Acad. Sinica, Shanghai, China
Abstract :
Thermal interdiffusion is used to shift peak response wavelength of the quantum well infrared photodetectors (QWIP). A maximum of 0.7 μm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red shift is attributed to Si-dopant enhanced intermixing. Both the dark current and responsivity of QWIP are decreased for 900°C annealed sample than as-grown one, which is attributed to decrease of electron concentration in the quantum well due to Si-dopant outdiffusion
Keywords :
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; gallium arsenide; infrared detectors; optical tuning; photodetectors; quantum well devices; red shift; 900 C; GaAs-AlGaAs; GaAs/AlGaAs quantum well IR photodetector; Si dopant outdiffusion; annealing; dark current; electron concentration; error function potential profile; intermixing; red shift; responsivity; thermal interdiffusion; wavelength tuning; Dark current; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photodetectors; Physics; Quantum wells; Rapid thermal annealing; Space technology; Thermal engineering;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791600
