Title :
Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates
Author :
Morita, Toshihiro ; Kikuchi, Akihiko ; Nomura, Ichirou ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
We propose sulfur-free wide-gap II-VI quaternary compounds of MgZnCdSe as a material of visible light emitting devices. MgZnCdSe compounds have bandgap energy from 2.1 to 3.6 eV, maintaining lattice-matching to InP substrate. MgZnCdSe lattice-matching quaternary compounds with various Mg composition were grown on (100) InP substrates, for the first time. A wide range of photoluminescence (PL) peak wavelengths from 572 nm (2.17 eV) to 398 nm (3.17 eV) at 15 K was obtained with increasing Mg composition
Keywords :
energy gap; magnesium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor materials; zinc compounds; (100) InP substrates; 15 K; 2.1 to 3.6 eV; 2.17 to 3.17 eV; 572 to 398 nm; InP; Mg composition; MgZnCdSe; bandgap energy; lattice-matching; molecular beam epitaxial growth; photoluminescence peak wavelengths; sulfur-free wide-gap II-VI quaternary compounds; visible light emitting devices; Diode lasers; Gallium arsenide; Indium phosphide; Lattices; Maintenance engineering; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Power engineering and energy; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522266
