DocumentCode
3138039
Title
Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics
Author
Ito, Hiroshi ; Asada, Kunihiro
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
fYear
1999
fDate
1999
Firstpage
147
Lastpage
150
Abstract
In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy
Keywords
MOSFET; silicon-on-insulator; S-factor characteristics; TEM; analyzing fitting errors; back gate characteristics; fully-depleted SOI MOSFETs; one-dimensional model; structural parameters; subthreshold slope characteristics; Ellipsometry; Error analysis; FETs; Indium tin oxide; Iterative methods; MOSFETs; Structural engineering; Substrates; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791605
Filename
791605
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