Title :
Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics
Author :
Ito, Hiroshi ; Asada, Kunihiro
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy
Keywords :
MOSFET; silicon-on-insulator; S-factor characteristics; TEM; analyzing fitting errors; back gate characteristics; fully-depleted SOI MOSFETs; one-dimensional model; structural parameters; subthreshold slope characteristics; Ellipsometry; Error analysis; FETs; Indium tin oxide; Iterative methods; MOSFETs; Structural engineering; Substrates; Very large scale integration; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791605
