Title :
Bragg reflector thin film resonator using aluminium nitride deposited by RF sputtering
Author :
Kim, Sang-Hee ; Kim, Jong-Heon ; Lee, Jeon-Kook ; Lee, Si-Hyung ; Yoon, Ki Hyun
Author_Institution :
Dept. of Radio Sci. & Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
Bragg reflector thin film resonators (TFR´s) using AlN reactively sputtered at room temperature were investigated. The Bragg reflector TFR is composed of a piezoelectric aluminium nitride thin film, electrodes of Al (1500 Å) on both sides and reflector layers of an Al-AlN pair. The resonator has a fundamental resonance at 2.81 GHz with a return loss of 3.07 dB
Keywords :
acoustic resonators; acoustic wave reflection; aluminium compounds; bulk acoustic wave devices; piezoelectric thin films; sputter deposition; sputtered coatings; 1500 A; 2.81 GHz; 3.07 dB; Al electrodes; Al-AlN; Al-AlN pair reflector layers; BAW device; Bragg reflector thin film resonator; RF sputter deposition; piezoelectric AlN thin film; reactively sputtered AlN; Acoustic waves; Aluminum; Electrodes; Land surface temperature; Piezoelectric films; Power transmission lines; Radio frequency; Sputtering; Substrates; Surface impedance;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926131
