Title :
Distribution and chemical bonding of N at NO nitrided SiC/SiO2 interface
Author :
Li, Hui-feng ; Dimitrijev, Sima ; Sweatman, Denis ; Harrison, H.Barry ; Tanner, Phillip
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
This paper presents results of the physical characterization of NO nitrided SiC/SiO2 interfaces by XPS analysis. The results show different interface chemistries between NO nitrided and Ar annealed SiC/SiO2 interfaces. After NO nitridation, N builds up at the SiC/SiO2 interface forming Si≡N bonds. The NO nitrided SiC/SiO2 interface is free of the complex interface oxide/carbon compounds which are suggested to be the reason for the inferiority of the SiC/SiO2 interface compared to the Si/SiO 2 interface
Keywords :
X-ray photoelectron spectra; bonds (chemical); nitridation; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; N distribution; NO; NO nitridation; SiC-SiO2; SiC/SiO2 interface; XPS; chemical bonding; Annealing; Argon; Bonding; Chemicals; Hydrogen; Nitrogen; Oxidation; Performance analysis; Silicon carbide; Thermal conductivity;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791610
