Sulfur-treated InP surfaces studied by soft X-ray photoemission spectroscopy

Author

Maeyama, S. ; Sugiyama, M. ; Heun, S. ; Oshim, M.

Author_Institution

NTT Interdisciplinary Res. Labs., Tokyo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

825

Lastpage

826

Abstract

Sulfur treatment with (NH₄)₂S_x is regarded as an efficient surface passivation technique to reduce surface states on both GaAs and InP. In this study, we measured S1s photoelectron spectra by using synchrotron radiation soft X-rays, which have no spin-orbit splitting, to investigate the effect of water rinsing and the change in the sulfur chemical bond by annealing in vacuum after the (NH₄)₂S_x-treatment. Reflection high-energy electron diffraction (RHEED) patterns were recorded to obtain information about the surface structure of the samples before the photoelectron measurements

Keywords

III-V semiconductors; X-ray photoelectron spectra; bonds (chemical); indium compounds; passivation; reflection high energy electron diffraction; surface states; surface treatment; (NH₄)₂S; (NH₄)₂S_x-treatment; InP; RHEED; S-treated InP surfaces; S1s photoelectron spectra; annealing; chemical bond; efficient surface passivation technique; reflection high-energy electron diffraction patterns; soft X-ray photoemission spectroscopy; surface states; surface structure; synchrotron radiation soft X-rays; water rinsing; Annealing; Bonding; Chemicals; Gallium arsenide; Indium phosphide; Passivation; Photoelectricity; Reflection; Surface treatment; Synchrotron radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522271

Filename

522271