Title :
Sulfur-treated InP surfaces studied by soft X-ray photoemission spectroscopy
Author :
Maeyama, S. ; Sugiyama, M. ; Heun, S. ; Oshim, M.
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
Abstract :
Sulfur treatment with (NH4)2Sx is regarded as an efficient surface passivation technique to reduce surface states on both GaAs and InP. In this study, we measured S1s photoelectron spectra by using synchrotron radiation soft X-rays, which have no spin-orbit splitting, to investigate the effect of water rinsing and the change in the sulfur chemical bond by annealing in vacuum after the (NH4)2Sx-treatment. Reflection high-energy electron diffraction (RHEED) patterns were recorded to obtain information about the surface structure of the samples before the photoelectron measurements
Keywords :
III-V semiconductors; X-ray photoelectron spectra; bonds (chemical); indium compounds; passivation; reflection high energy electron diffraction; surface states; surface treatment; (NH4)2S; (NH4)2Sx-treatment; InP; RHEED; S-treated InP surfaces; S1s photoelectron spectra; annealing; chemical bond; efficient surface passivation technique; reflection high-energy electron diffraction patterns; soft X-ray photoemission spectroscopy; surface states; surface structure; synchrotron radiation soft X-rays; water rinsing; Annealing; Bonding; Chemicals; Gallium arsenide; Indium phosphide; Passivation; Photoelectricity; Reflection; Surface treatment; Synchrotron radiation;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522271
