Ultra low power supply voltage (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well

Author

Shibata, A. ; Matsuoka, T. ; Kakimoto, S. ; Kotaki, H. ; Nakano, M. ; Adachi, K. ; Ohta, K. ; Hashizume, N.

Author_Institution

Sharp Corp., Tenri, Japan

fYear

1998

fDate

9-11 June 1998

Firstpage

76

Lastpage

77

Abstract

We have demonstrated high speed operation at ultra low voltage using Bulk Dynamic Threshold MOSFET (B-DTMOS) which has shallow well with high impurity concentration layer between low impurity concentration layers for reducing signal transmission delay due to body resistance. Advantages of operation speed over conventional MOSFET in ultra low voltage operation are discussed. Even over the region of ultra low power supply voltage and low threshold voltage where forward bias effect is weak, we confirmed the advantage of the B-DTMOS over the conventional MOS. We achieved an extreme fast ring oscillator operation (182 psec/stage in 0.3 V operation) using BDTMOS with low body resistance.

Keywords

MOSFET; low-power electronics; 0.3 V; 182 ps; B-DTMOS; body resistance; bulk dynamic threshold voltage MOSFET; high speed operation; impurity concentration layer; ring oscillator; shallow well; signal transmission delay; ultra low power supply voltage operation; Chromium; Delay; Immune system; Impurities; Leakage current; Low voltage; MOSFET circuits; Parasitic capacitance; Power supplies; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689206

Filename

689206