Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN

Author

Parish, G. ; Keller, S. ; Kozodoy, P. ; Ibbetson, J.P. ; Marchand, H. ; Fini, P.T. ; Fleischer, S.B. ; DenBaars, S.P. ; Mishra, U.K. ; Tarsa, E.J.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1999

fDate

1999

Firstpage

175

Lastpage

178

Abstract

Solar-blind ultraviolet photodiodes with a cutoff wavelength of 285 nm were fabricated on Laterally Epitaxially Overgrown (LEO) GaN grown by metalorganic chemical vapour deposition (MOCVD). Current-voltage measurements of the diodes exhibited dark current densities as low as 10 nA/cm² at -5 V. Spectral response measurements revealed peak responsivities of up to 0.05 A/W. For comparison, diodes were fabricated using the same p-i-n structure deposited on dislocated GaN. These diodes had dark current densities over seven orders of magnitude higher. In addition, whilst having comparable peak responsivities, the diodes on dislocated GaN had a less sharp cutoff

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; p-i-n photodiodes; semiconductor epitaxial layers; ultraviolet detectors; wide band gap semiconductors; 285 nm; AlGaN; GaN; current-voltage characteristics; cutoff wavelength; dark current density; lateral epitaxial overgrowth; metalorganic chemical vapour deposition; p-i-n photodiode; peak responsivity; solar-blind ultraviolet detector; spectral response; Chemicals; Current measurement; Dark current; Density measurement; Detectors; Gallium nitride; Low earth orbit satellites; P-i-n diodes; PIN photodiodes; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791613

Filename

791613