DocumentCode
3138238
Title
Characterization of low frequency noise in InGaAs-channel heterojunction-FET´s and GaAs-JFET´s at liquid helium temperature
Author
Hosako, Iwao ; Okumura, Ken´ichi ; Akiba, Makoto ; Hiromoto, Norihisa
fYear
1999
fDate
1999
Firstpage
183
Lastpage
186
Abstract
This paper examines InGaAs-channel heterojunction-FETs (HJ-FETs) and GaAs-JFETs for their low-noise and low-power characteristics at 4.2 K. We demonstrated that Hooge´s empirical relation applies to a FET with long gate
Keywords
1/f noise; III-V semiconductors; cryogenic electronics; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor device noise; 4.2 K; GaAs; Hooge´s empirical relation; InGaAs; JFET; bias voltages; gate size; heterojunction-FET; liquid helium temperature; long gate FET; low frequency noise; low-power characteristics; readout electronics; Circuits; Cryogenics; FETs; Impedance; Intrusion detection; Leakage current; Low-frequency noise; Performance evaluation; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791615
Filename
791615
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