Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Author

Zuo, H.Y. ; Paterson, Melissa J. ; Goldys, E. ; Tansley, T.L. ; Afifuddin

Author_Institution

Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia

fYear

1999

fDate

1999

Firstpage

199

Lastpage

201

Abstract

Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600°C. The hole mobilities obtained are up to 40 cm² V^-1 s^-1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature

Keywords

Hall mobility; III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; hole density; hole mobility; laser deposition; magnesium; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 600 C; Al₂O₃; GaAs; GaN:Mg; Hall effect; Si; UV photodetector applications; XRD; doped p-type films; hole concentration; hole mobilities; hole mobility; laser assisted MOCVD; low temperature; photoluminescence spectra; room temperature; sapphire substrate; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Gallium nitride; Laser theory; Masers; Plasma temperature; Semiconductor lasers; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791619

Filename

791619