Developing models of OMVPE growth from in situ X-ray measurements

Author

Fuoss, P.H. ; Kisker, D.W. ; Stephenson, G.B. ; Brennan, S.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

827

Lastpage

830

Abstract

This paper summarizes our recent X-ray scattering and X-ray spectroscopy experiments looking at the organometallic vapor phase homoepitaxial growth of GaAs. The measured composition profiles and growth rates agree well with predictions by Jensen and coworkers for our reactor. Evidence for the presence of a partially decomposed trimethylgallium layer on the surface during growth at 500°C is presented. A schematic model of growth which includes the presence of this structurally ordered adsorbed layer is presented

Keywords

III-V semiconductors; X-ray absorption spectra; X-ray diffraction; fluorescence; gallium arsenide; semiconductor growth; surface structure; vapour phase epitaxial growth; 500 degC; GaAs; OMVPE growth; X-ray scattering; X-ray spectroscopy; composition profiles; growth rates; in situ X-ray measurements; organometallic vapor phase homoepitaxial growth; partially decomposed trimethylgallium layer; structurally ordered adsorbed layer; Atomic measurements; Gallium arsenide; Inductors; Phase measurement; Semiconductor process modeling; Spectroscopy; Substrates; Surface reconstruction; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522272

Filename

522272