Title :
Channel engineering of 0.13 /spl mu/m nMOSFET for 1.0 V CMOS using gate poly-Si oxidation and laterally profiled, surface concentrated channel technologies
Author :
Momiyama, Y. ; Kurata, H. ; Ohkubo, S. ; Sugii, T.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
We have developed a 0.13 /spl mu/m nMOSFET for 1.0 V CMOS using gate poly-Si oxidation and laterally profiled surface concentrated channel technologies which realize high performance (Ion=0.47 mA//spl mu/m, Gm=680 mS/mm, Vth roll-off=33 mV) with a 74 mV/decade S-factor and a 16% reduction of Cj.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit technology; low-power electronics; oxidation; 0.13 micron; 1.0 V; Si; capacitance; channel engineering; gate polysilicon oxidation; laterally profiled surface concentrated channel technology; low power CMOS IC; nMOSFET; subthreshold slope; threshold voltage roll-off; Boron; CMOS technology; Capacitance; Design engineering; Fluid flow measurement; Impurities; Insulation; Laboratories; MOSFET circuits; Oxidation;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689207
