Fabrication of depletion- and enhancement-mode GaInP/GaAs /spl delta/-HEMT´s

Author

Wu, Min-Yuan ; Lour, Wen-Shiung ; Huang, Ge-Li ; Shih, Yu-Min

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan

fYear

1998

fDate

14-16 Dec. 1998

Firstpage

218

Lastpage

220

Abstract

A new HEMT structure was proposed to fabricate both types of device. An additional n-GaAs cap layer was employed to control the device operation model. Accordingly, both depletion- and enhancement-mode HEMTs were simultaneously fabricated on the same chip by selectively removing the cap layer. For a 1×1000 μm² device, the pinch-off voltage for the depletion mode device is -1.8 V. The maximum applied gate voltage for the enhancement mode one is +1.8 V. The measured output current and transconductance are 260 (200) mA/mm, 175 (150) mS/mm. The measured ft and fmax are 6.3 (6) and 13 (12) GHz for depletion and enhancement-mode devices, respectively

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device measurement; -1.8 V; 1.8 V; 12 to 13 GHz; 150 mS/mm; 175 mS/mm; 6 to 6.3 GHz; GaInP-GaAs; GaInP/GaAs /spl delta/-HEMT; HEMT structure; depletion-mode; enhancement-mode; fabrication; gate voltage; n-GaAs cap layer; output current; pinch-off voltage; transconductance; Current measurement; Etching; Fabrication; Gallium arsenide; HEMTs; Insulation; MODFETs; Semiconductor device measurement; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA, Australia

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791624

Filename

791624