Title :
New process for self-aligned T-gate heterostructure field-effect transistors with reduced gate length
Author :
Chen, H.R. ; Shih, Y.M. ; Lour, W.S. ; Wu, M.Y.
Author_Institution :
Dept. of Electr. Eng., Private Kung-Shan Inst. of Technol., Tainan, Taiwan
Abstract :
This paper reports on self-aligned T-gate InGaP/GaAs FETs using n +/N+/δ(P+)/n structures. The N +-InGaP/δ(P+)-InGaP/n-GaAs structure forms a planar-doped barrier. An over-etch n+-GaAs/N+-InGaP layer offers the implement of self-aligned T-gate by an highly selective etch between the InGaP and a GaAs layers. A fabricated device with an effective gate length of 1.5×100 (0.6×100) μm2 exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively. Moreover, all proposed devices show good dc and ac linearity
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; semiconductor device measurement; 0.6 mm; 1.5 mm; 100 mm; 78 to 80 mS/mm; 9 to 30 GHz; +/N+/δ(P+)/n structures; InGaP-GaAs; N+-InGaP/δ(P+)-InGaP/n-GaAs structure; ac linearity; dc linearity; effective gate length; extrinsic transconductance; highly selective etch; over-etch n+-GaAs/N+-InGaP layer; planar-doped barrier; reduced gate length; self-aligned T-gate; self-aligned T-gate InGaP/GaAs FETs; self-aligned T-gate heterostructure field-effect transistors; unity-current gain frequency; unity-power gain frequency; Business; Etching; FETs; Frequency; Gallium arsenide; Gold; HEMTs; Insulation; Linearity; MODFETs;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791625
