DocumentCode
3138478
Title
Determination of LED equivalent circuits using network analyser measurements
Author
Cheung, W.N. ; Edwards, P.J. ; French, G.N.
Author_Institution
Centre for Adv. Telecommun. & Quantum Electron. Res., Canberra Univ., Belconnen, ACT, Australia
fYear
1999
fDate
1999
Firstpage
232
Lastpage
235
Abstract
We performed measurements on a number of pre-production DH LEDs biased from 1 to 10 mA and, for each case, we obtained a broad-band input impedance plot which gives both magnitude and phase as a function of frequency. We deduced from these plots the carrier lifetime, differential diode resistance, diffusion capacitance, parasitic resistance, and the ideality factor of each diode. The parameters were then used in the equivalent circuit to calculate the modelled input impedance of the device which was then compared with the measured result. There is good agreement over a wide frequency range, at least up to the frequency equal to 1/(carrier lifetime). The existence of a maximum phase lag previously noticed in single-port laser measurements is fully accounted for in our model
Keywords
capacitance; carrier lifetime; electric impedance; equivalent circuits; light emitting diodes; network analysis; semiconductor device measurement; semiconductor device models; LED equivalent circuits; broad-band input impedance plot; carrier lifetime; differential diode resistance; diffusion capacitance; ideality factor; maximum phase lag; modelled input impedance; network analyser measurements; parasitic resistance; pre-production DH LEDs; Charge carrier lifetime; Circuit analysis; DH-HEMTs; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Impedance measurement; Light emitting diodes; Performance evaluation; Phase measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791628
Filename
791628
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