DocumentCode
3138485
Title
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Author
Edwards, P.J. ; Ganeshkumar, G. ; Cheung, W.N. ; Jagadish, C. ; Tan, H. ; Fu, L.
Author_Institution
Centre for Adv. Telecommun. & Quantum Electron. Res., Canberra Univ., ACT, Australia
fYear
1999
fDate
1999
Firstpage
236
Lastpage
239
Abstract
We report measurements of the summed and differenced intensity noise levels at the cleaved facets of symmetric cavity GRINSCH SQW InGaAs Fabry Perot laser diodes. These measurements enable the cross-correlation coefficient between the intensity fluctuations at the two facets, the single facet noise level and the total laser noise level to be determined. We show that the single facet noise level may then be resolved into two components: a cavity noise component and an additional partition noise component dependent on the inversion factor and the facet reflectivities. We discuss the diagnostic value of this procedure in the development and characterisation of low noise laser diodes
Keywords
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; laser cavity resonators; laser noise; laser variables measurement; quantum well lasers; semiconductor device measurement; semiconductor device noise; InGaAs; cavity noise component; cleaved facets; cross-correlation coefficient; diagnostic tool; difference intensity noise levels; facet reflectivities; intensity fluctuations; inter-facet noise correlation measurement; inversion factor; low noise laser diodes; partition noise component; semiconductor laser; single facet noise; single facet noise level; summed intensity noise levels; symmetric cavity GRINSCH SQW InGaAs Fabry Perot laser diodes; total laser noise level; Diode lasers; Laser excitation; Laser modes; Laser noise; Laser theory; Noise level; Noise measurement; Pump lasers; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791629
Filename
791629
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