A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Author

Liu, W.C. ; Wang, W.C. ; Chang, W.L. ; Yu, K.H. ; Feng, S.C. ; Yan, J.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1999

fDate

1999

Firstpage

243

Lastpage

245

Abstract

A In_0.5Ga_0.5P-GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at the emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device measurement; wide band gap semiconductors; δ-doped wide-gap collector; 1 V; 20 V; 50 mV; DHBT; In_0.5Ga_0.5P-GaAs; In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor; InGaP/GaAs double heterojunction bipolar transistor; base-collector heterojunction; breakdown voltage; current gain; emitter-base heterojunction; high-power; high-speed; large input signal circuit applications; low-power consumption; offset voltage; potential spike; saturation voltage; Breakdown voltage; Chemical processes; Circuits; DH-HEMTs; Double heterojunction bipolar transistors; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Radio frequency; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791631

Filename

791631