Title :
On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)
Author :
Liu, W.C. ; Cheng, S.-Y. ; Pan, H.J. ; Feng, S.C. ; Yu, K.H. ; Yan, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistor switches; gallium arsenide; indium compounds; minority carriers; negative resistance devices; resonant tunnelling transistors; semiconductor superlattices; 293 K; AlInAs-GaInAs; confinement barrier; forward active mode; minority carriers; negative-differential-resistance switch; negative-differential-resistance transistor; resonant tunneling; saturation mode; superlattice; Carrier confinement; Character generation; Logic circuits; Resonant tunneling devices; Superlattices; Switches; Switching circuits; Switching converters; Temperature control; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791633
