Monolayer growth in InP/GaInAs quantum wells grown by selective area MOVPE

Author

Ottenwalder, D. ; Frankowsky, G. ; Wild, M. ; Gfrörer, O. ; Hangleiter, A. ; Scholz, F.

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

831

Lastpage

834

Abstract

We investigated optical properties (cathodoluminescence linescans) of selectively deposited quantum wells. As expected for selective MOVPE, composition and growth rate of bulk layers and quantum wells with thicknesses above 6 nm are determined by gas phase diffusion. Thin quantum wells (L_z<6 nm) showed a clearly visible thickness variation in monolayer steps. The monolayer steps are extended at least over several 10 μm depending on the mask pattern. Their formation can be influenced by the growth conditions, especially growth interruptions at the heterointerfaces. Based on our recent experiments, the lower interface (InP-GaInAs) is supposed to be crucial for the generation of monolayer steps

Keywords

III-V semiconductors; cathodoluminescence; gallium arsenide; indium compounds; monolayers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 6 nm; InP; InP/GaInAs quantum wells; bulk layers; cathodoluminescence linescans; composition; gas phase diffusion; growth conditions; growth interruptions; growth rate; heterointerfaces; lower interface; mask pattern; monolayer growth; monolayer steps; optical properties; selective area MOVPE; selectively deposited quantum wells; thickness variation; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Monolithic integrated circuits; Optical materials; Optoelectronic devices; Photonic band gap; Quantum well lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522273

Filename

522273