Observation of As carryover from two different As sources

The As carryover processes from two different As sources were observed simultaneously but separately by photoluminescence (PL) and high resolution x-ray diffraction (HRXRD) in InAs_xP_1-x /InP single quantum wells (SQWs) formed by AsH₃ exposure. One of the main As source of carryover, As absorbed on the epilayer surface, was observed by PL as a blue shift of peak energy with growth temperature. The other source, re-evaporated As from the interior of the reactor, was also detected in the same samples by an abnormal HRXRD rocking curve, and the concentration of As in the buffer layer was quite uniform though its amount was minute. Finally, it was briefly considered that how the two carryover processes were observed simultaneously, especially in this study