Title :
Effects of plasma surface pre-treatments on the electrical properties of silicon nitride passivated GaAs MESFETs
Author :
Prasad, Krishnamachar
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
GaAs MESFETs were fabricated using different surface pre-treatments such as photochemical passivation and RF plasma pre-treatments. Detailed electrical characterization of MESFETs was subsequently carried out. The results point out that the use of RF plasma pre-treatments is beneficial to GaAs MESFET device technology. GaAs MESFETs fabricated using RF plasma pre-treatment exhibit improved electrical characteristics and better thermal stability
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; passivation; plasma materials processing; surface treatment; thermal stability; GaAs; I-V characteristics; MESFET; RF plasma pre-treatment; electrical characteristics; photochemical passivation; plasma surface pre-treatments; thermal stability; Electric variables; Gallium arsenide; MESFETs; Passivation; Photochemistry; Plasma devices; Plasma properties; Plasma stability; Radio frequency; Thermal stability;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791639
