DocumentCode
3138672
Title
On the transient photoconductive decay technique for lifetime extraction in HgCdTe
Author
Redfern, D.A. ; Musca, C.A. ; Smith, E.P.G. ; Dell, J.M. ; Faraone, L.
Author_Institution
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
fYear
1999
fDate
1999
Firstpage
275
Lastpage
278
Abstract
The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique
Keywords
II-VI semiconductors; cadmium compounds; carrier lifetime; mercury compounds; minority carriers; photoconductivity; surface recombination; HgCdTe; lifetime extraction; minority carrier lifetime; surface recombination; transient photoconductive decay; Charge carrier lifetime; Charge carrier processes; Data mining; Equations; Photoconducting devices; Photoconductivity; Radiative recombination; Semiconductor devices; Spontaneous emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791640
Filename
791640
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