Super-high efficiency solar cell R&D program in Japan

Author

Yamaguchi, Masafumi ; Wakamatsu, Seiji

Author_Institution

Super-High Efficiency Compound Solar Cell Res., Toyota Technol. Inst., Nagoya, Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

9

Lastpage

11

Abstract

The R&D program of super-high efficiency solar cells, especially III-V compound semiconductor solar cells, in the New Sunshine Project of MITI (Ministry of International Trade and Industry) in Japan is described. In order to use III-V compound solar cells widely, it is necessary to improve their conversion efficiency and reduce their cost. Based on the above background, the Japanese R&D program of super-high efficiency solar cells started in FY (fiscal year) 1990 with support from MITI and NEDO. Up to now, InGaP/GaAs two-junction solar cells have reached the highest efficiency achieved in Japan of over 30%. By the end of the FY 1996, the authors hope an efficiency of 35% will be achieved

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; project engineering; solar cells; III-V compound semiconductor; InGaP-GaAs; InGaP/GaAs two-junction solar cell; Japan; New Sunshine Project; conversion efficiency; solar cell R&D programme; super-high efficiency; Costs; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Photovoltaic cells; Photovoltaic systems; Production; Research and development; Solar power generation; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563936

Filename

563936