Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

Selective MOVPE growth of InGaAs(P) on mask-patterned InP substrate using tertiarybutylarsine and tertiarybutylphosphine (TBA/TBP) was investigated for the first time. Selective growth was achieved with no polycrystal on the SiO_x masks. Several compositions of InGaAs(P) were selectively grown and the bandgap wavelength shifts were evaluated against the mask width. Larger photoluminescence wavelength shift was observed with longer bandgap wavelength InGaAs(P). From the measurement of growth rate enhancement, vapor phase lateral diffusion length was estimated for several InGaAs(P) with various V/III ratios. It was made clear that the lateral diffusion length of group III species using TBA/TBP can be widely controlled over the wide range of V/III ratio, even for low V/III ratios. From this feature, selective MQW growth using TBA/TBP has better bandgap controllability than that using AsH₃/PH₃ so that it is extensively expected to realize the high performance integrated MQW optical waveguide devices