Title :
Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parameters
Author :
Rao, Rapeta V V V J ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
GaAs and Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. Long term degradation studies were carried out to Identify failure mechanisms and validate the reliability aspect of these devices. 1000 Å and 250 Å thick LT- Al0.3Ga0.7As and 250 Å thick LT-GaAs MISFETs displayed quite stable characteristics up to 1000 hrs of stressing at 210°C. 1000 Å thick LT-GaAs MISFET devices exhibited considerable degradation in breakdown voltage and output resistance, RDS, measured at the gate bias of pinch-off voltage. The poor performance of thicker LT-GaAs samples is due to the compositional changes at the interface of the insulator and the active layer during the thermal stress
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor device breakdown; semiconductor device reliability; semiconductor epitaxial layers; semiconductor growth; thermal stresses; 1000 A; 1000 h; 210 C; 250 A; Al0.3Ga0.7As; GaAs; MISFET parameters; breakdown voltage; epilayers; gate b; insulators; long term degradation; low-temperature-grown GaAs; molecular beam epitaxy; output resistance; pinch-off voltage; thermal stress; Electrical resistance measurement; Fabrication; Failure analysis; Gallium arsenide; Insulation; MISFETs; Molecular beam epitaxial growth; Stress measurement; Thermal degradation; Thermal stresses;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791650
