Nonlinear transport and optical properties is a GaAs/AlGaAs heterostructure under linearly polarised intense terahertz laser radiation

A theoretical study on nonlinear transport and optical properties is presented for a two-dimensional electron gas (2 DEG) driven by a linearly polarised intense terahertz (THz) laser field. We have investigated the steady-state electronic transition rate induced by electron-photon-phonon interactions in a semiconductor-based 2 DEG system. Applying this result to the case of electron interactions with LO-phonons and with THz free-electron laser fields, we have studied the dependence of transport and optical coefficients, such as resistivity and intensity of optical absorption, on frequency and intensity of the radiation field in a GaAs/AlGaAs heterojunction. These results can be used for understanding and interpreting the experimental results reported recently