Title :
Interface stability of metal/InP based material systems
Author :
Ashizawa, Y. ; Nozaki, C. ; Noda, T. ; Sasaki, A.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The stability of interfaces between metal (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry (RBS). Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be stable compared to those of Ni/In-based semiconductors and Ti/In-based semiconductors, respectively. Faster diffusion of Pt atoms was observed in In- and As- containing materials than in P-containing materials. Mo/semiconductors were most stable
Keywords :
III-V semiconductors; Rutherford backscattering; chemical interdiffusion; indium compounds; interface structure; molybdenum; nickel; platinum; semiconductor-metal boundaries; titanium; 500 degC; III-V compound semiconductors; InP; Mo; Mo/semiconductors; Ni; Ni-GaAs; Ni/GaAs; Ni/In-based semiconductors; Pt; Pt atoms; RBS; Rutherford backscattering spectrometry; Ti; Ti-GaAs; Ti/GaAs; Ti/In-based semiconductors; annealing; faster diffusion; interface stability; interfacial lattice disorder; metal diffusion; metal/InP based material systems; metal/semiconductor samples; Annealing; Backscatter; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Inorganic materials; Lattices; Semiconductor materials; Spectroscopy; Stability;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522280
