A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy

Author

Johnston, M.B. ; Dao, L.V. ; Gal, M. ; Lumpkin, N.E. ; Clark, R.G. ; Lan, F. ; Tan, H.H. ; Jagadish, C. ; Li, Na ; Chen, Zhanghai ; Liu, Xingquan ; Li, Ning ; Lu, Wei ; Shen, S.C.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

1999

fDate

1999

Firstpage

348

Lastpage

351

Abstract

Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; photodetectors; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 ps; 3 nm; GaAs-AlGaAs; GaAs/AlGaAs quantum well infrared photodetectors; carrier dynamics; inter-band transition energies; inter-subband transition energies; metal organic vapour phase epitaxy; molecular beam epitaxy; photoluminescence; photoresponse; Energy measurement; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Photoluminescence; Semiconductor process modeling; Spectroscopy; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791659

Filename

791659