Title :
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Author :
Dao, L.V. ; Johnston, M.B. ; Gal, M. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; frequency response; gallium arsenide; indium compounds; photoconductivity; photoluminescence; semiconductor quantum wells; 25 ps; 45 ps; InGaAs-AlGaAs; InGaAs-GaAs; InGaAs/AlGaAs; InGaAs/GaAs; enhanced frequency response; intermixed quantum wells; photo-excited carriers; photoluminescence up conversion; quantum well devices; Frequency response; Gallium arsenide; Indium gallium arsenide; Laser beams; Laser excitation; Laser mode locking; Photoluminescence; Physics; Shape; Signal resolution;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791660
