Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices

Author

Dao, L.V. ; Johnston, M.B. ; Gal, M. ; Fu, L. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia

fYear

1999

fDate

1999

Firstpage

352

Lastpage

354

Abstract

Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; frequency response; gallium arsenide; indium compounds; photoconductivity; photoluminescence; semiconductor quantum wells; 25 ps; 45 ps; InGaAs-AlGaAs; InGaAs-GaAs; InGaAs/AlGaAs; InGaAs/GaAs; enhanced frequency response; intermixed quantum wells; photo-excited carriers; photoluminescence up conversion; quantum well devices; Frequency response; Gallium arsenide; Indium gallium arsenide; Laser beams; Laser excitation; Laser mode locking; Photoluminescence; Physics; Shape; Signal resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791660

Filename

791660