Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation

As and H irradiation with subsequent thermal annealing were used to investigate the intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells (QWs). Large photoluminescence (PL) energy shifts were observed in both materials, Due to dynamic annealing in AlGaAs and the presence of Al in the barriers, the InGaAs/AlGaAs samples showed better PL intensities recovery and larger energy shifts than the InGaAs/GaAs samples after both As and H irradiation. Larger energy shifts were obtained for As irradiation at lower doses than when compared to H irradiation, However, at higher doses H irradiation resulted in higher energy shift than As irradiation, Results of the effect of irradiation temperature showed that higher shift could be obtained with increasing temperature for As irradiation at lower doses while for H irradiation, implant temperature had little effect