DocumentCode :
3139142
Title :
Intermixing induced resonance shift in GaAs/AlxOy DBR resonators
Author :
Cohen, M.I. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
1999
fDate :
1999
Firstpage :
365
Lastpage :
368
Abstract :
The effect of ion induced interdiffusion on the resonant wavelength of GaAs/AlxOy DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; red shift; semiconductor lasers; semiconductor-insulator boundaries; surface diffusion; GaAs-AlO; GaAs/AlxOy DBR resonators; intermixing induced resonance shift; ion induced interdiffusion; lateral oxidation; red-shift; resonant wavelength; Distributed Bragg reflectors; Gallium arsenide; Laser tuning; Optical resonators; Oxidation; Reflectivity; Refractive index; Resonance; Semiconductor laser arrays; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
Type :
conf
DOI :
10.1109/COMMAD.1998.791664
Filename :
791664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3139142
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