• DocumentCode
    3139142
  • Title

    Intermixing induced resonance shift in GaAs/AlxOy DBR resonators

  • Author

    Cohen, M.I. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    The effect of ion induced interdiffusion on the resonant wavelength of GaAs/AlxOy DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; red shift; semiconductor lasers; semiconductor-insulator boundaries; surface diffusion; GaAs-AlO; GaAs/AlxOy DBR resonators; intermixing induced resonance shift; ion induced interdiffusion; lateral oxidation; red-shift; resonant wavelength; Distributed Bragg reflectors; Gallium arsenide; Laser tuning; Optical resonators; Oxidation; Reflectivity; Refractive index; Resonance; Semiconductor laser arrays; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791664
  • Filename
    791664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3139142