Title :
Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures
Author :
Rais, M.H. ; Musca, C.A. ; Dell, J.M. ; Antoszewski, J. ; Nener, B.D.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA
Abstract :
This paper presents a study on the temperature and bias dependence of 1/f noise for mid-wavelength infrared (MWIR) HgCdTe n-on-p photodiodes fabricated on vacancy doped p-type LPE grown epilayers. The low frequency noise spectrum is fitted to a theoretical model to determine the dark current mechanism responsible for the 1/f noise component. At temperatures above 130 K the 1/f noise is dominated by the diffusion current component, and the temperature dependence in this regime gives an activation energy of 0.73Eg. The Hooge parameter obtained from the model increased monotonically from 1.7×10-4 to 2.25×10-3 as the temperature was varied from 130 K to 180 K
Keywords :
1/f noise; II-VI semiconductors; cadmium compounds; dark conductivity; infrared detectors; mercury compounds; photodiodes; semiconductor device models; semiconductor device noise; vacancies (crystal); 1/f noise; 130 to 180 K; 3 to 5 mum; HgCdTe; HgCdTe IR photovoltaic detectors; Hooge parameter; activation energy; bias dependence; dark current mechanism; diffusion current; elevated temperatures; low frequency noise; low frequency noise spectrum; mid-wavelength infrared HgCdTe n-on-p photodiodes; temperature dependence; vacancy doped p-type LPE grown epilayers; 1f noise; Dark current; Infrared detectors; Low-frequency noise; Noise generators; Photodiodes; Photovoltaic systems; Semiconductor device noise; Solar power generation; Temperature dependence;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791665
