Title :
A 50-GHz 0.25-/spl mu/m high-energy implanted BiCMOS (HEIBiC) technology for Low-Power high-integration wireless-communication systems
Author :
Yih-Feng Chyan ; Ivanov, T.G. ; Carroll, M.S. ; Nagy, W.J. ; Chen, A.S. ; Lee, K.H.
Author_Institution :
Bell Lab., Lucent Technol., Orlando, FL, USA
Abstract :
A 0.25-/spl mu/m modular high-energy implanted BiCMOS (HEIBiC) technology has been developed for high-integration wireless-communication systems. It integrates an RF bipolar transistor into the CMOS process without disturbing the CMOS device characteristics. HEIBiC technology utilizes implantation to form the base, collector and CMOS tubs. This single-poly emitter npn transistor demonstrates an f/sub T/=52 GHz for 2.5 V devices and an f/sub T/BV/sub CEO/ product of 171 GHz-V for 3.3 V devices. The performance of HEIBiC technology is competitive with the best reported in the literature.
Keywords :
BiCMOS integrated circuits; cellular radio; ion implantation; millimetre wave integrated circuits; semiconductor doping; 0.25 mum; 171 GHz; 2.5 V; 3.3 V; 50 GHz; 52 GHz; CMOS process; CMOS tubs; HEIBiC technology; RF bipolar transistor; Si; base; collector; high-energy implanted BiCMOS technology; implantation; low-power high-integration wireless-communication systems; single-poly emitter npn transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Costs; Energy consumption; Integrated circuit technology; Ion implantation; RF signals; Radio frequency;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689212
