Title :
Optical and electrical properties of chemically deposited CdS thin films modified by air annealing
Author :
Gluszak, Edward A. ; Hinckley, Steven
Author_Institution :
Center for Very High Speed Microelectron. Syst., Edith Cowan Univ., Joondalup, WA, Australia
Abstract :
Polycrystalline CdS thin films have been grown by chemical bath deposition (CBD) using cadmium acetate and thiourea as the Cd and S ion sources. The as-deposited films show a low degree of crystallinity, are very resistive (conductivity ~10-7 Ω-1·cm-1) and possess a small degree of photosensitivity. Air annealing of the films at 100-400°C for 1 hr converts them to n-type through partial conversion of CdS to CdO. This is accompanied by an increase in the photoconductivity by more than 6 orders of magnitude. The optical bandgaps of the as-deposited films were >2.38 eV, which decreased to ~2.24 eV after air annealing
Keywords :
II-VI semiconductors; annealing; cadmium compounds; carrier lifetime; energy gap; liquid phase deposition; optical constants; photoconductivity; semiconductor thin films; 100 to 400 degC; 1E-7 (ohmcm)-1; CdS; air annealing; chemical bath deposition; conductivity; crystallinity; optical bandgap; photoconductivity; photosensitivity; polycrystalline thin films; Annealing; Cadmium compounds; Chemicals; Conductive films; Conductivity; Crystallization; Ion sources; Optical films; Particle beam optics; Sputtering;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791680
