Title :
Determination of carrier generation lifetime via current transient in MOS capacitor
Author :
Kong, Frederick ; Lau, Mabel ; Yeow, Yew-Tong
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Queensland Univ., Brisbane, Qld., Australia
Abstract :
A technique for the measurement of semiconductor minority carrier generation lifetime based on MOS capacitor current transients is presented. The lifetime is extracted by fitting a derived analytical model of the current transients to the experimental data. Values of lifetime obtained by this technique are shown to agree well with conventional capacitance transient methods. A 2D numerical simulation to verify the method is also presented
Keywords :
MOS capacitors; carrier lifetime; minority carriers; transients; 2D numerical simulation; MOS capacitor; analytical model; carrier generation lifetime; current transient; minority carrier; Analytical models; Capacitance; Current measurement; DC generators; Data mining; MOS capacitors; Numerical simulation; Pulse generation; Semiconductor device doping; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791683
