Title :
Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
LDMOS technology is the main power amplifier technology used for cellular base stations for frequencies up to 2.14 GHz. With the latest LDMOS technology generations it is however possible, and demonstrated, to use LDMOS for frequencies up to 3.8 GHz. This paper describes the status and trends of LDMOS technology for wireless applications beyond 2.5 GHz.go beyond 2.5 GHz applications.
Keywords :
cellular radio; microwave power amplifiers; power MOSFET; silicon; LDMOS base station; MOSFET power amplifier; cellular base station; frequency 2.5 GHz; microwave power FET amplifier; Base stations; CMOS technology; Capacitance; Cutoff frequency; MOSFETs; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation; Silicon; MOSFET power amplifiers; MOSdevices; microwave power FET amplifiers; power amplifiers;
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
DOI :
10.1109/RWS.2008.4463430
