Title :
A high-barrier gate and tri-step doped channel transistor
Author :
Liu, W.C. ; Pan, H.J. ; Chang, W.L. ; Yu, K.H. ; Feng, S.C. ; Yan, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; leakage currents; semiconductor device breakdown; GaInP-GaAs; HFET; MESFET; breakdown voltage; cut-off frequency; drain saturation current; gate leakage current; gate turn-on; heavily doped δ(p+)-GaInP layer; high-barrier gate transistor; output current drivability; transconductance; tri-step doped channel transistor; Circuits; Cutoff frequency; FETs; Frequency measurement; Gallium arsenide; HEMTs; Leakage current; MESFETs; MODFETs; Transconductance;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791687
