Title :
Growth and properties of GaSb and AlxGa1-xSb layers by MOCVD
Author :
Ramelan, A.H. ; Drozdowicz-Tomsia, K. ; Tansley, T.L.
Author_Institution :
Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
A study of structural, electrical and optical properties of GaSb and AlxGa1-xSb (0.05⩽x⩽0.25) grown by metalorganic chemical vapour deposition on GaAs, GaSb and Ge substrates using TMAl, TMGa, and TMSb is reported. The optimum growth window established for GaSb growth (temperature 540°C and V/III=0.72) is significantly different from optimal growth parameters for AlGaSb layers. Higher V/III ratios and higher temperatures are required to protect the surface morphology of AlGaSb. All AlxGa1-x Sb in the investigated composition range 0.05⩽x⩽0.25 were grown at 580°C and 800°C and V/III ratio=3 and are characterized by excellent, smooth morphology, very high optical transmission and electrical parameters comparable with the best reported for this type of layer
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; carrier density; carrier mobility; gallium compounds; semiconductor epitaxial layers; surface structure; vapour phase epitaxial growth; visible spectra; 540 to 800 degC; AlGaSb; GaAs; GaAs substrates; GaSb; GaSb substrates; Ge; Ge substrates; MOCVD; V/III ratio; carrier concentration; carrier mobility; optical transmission; surface morphology; Chemical vapor deposition; Energy measurement; Gallium arsenide; High speed optical techniques; Inductors; MOCVD; Optical microscopy; Optical surface waves; Surface morphology; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791690
