Title :
RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip
Author :
Momose, H.S. ; Fujimoto, R. ; Otaka, S. ; Morifuji, E. ; Ohguro, T. ; Yoshitomi, T. ; Kimijima, H. ; Nakamura, S. ; Morimoto, T. ; Katsumata, Y. ; Tanimoto, H. ; Iwai, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Recently, direct tunneling gate oxide MOSFETs have shown the potential of enabling extremely high RF performance in analog applications. An excellent cutoff frequency of more than 150 GHz was reported at a gate length of less than 0.1 /spl mu/m. In this paper, RF noise characteristics of the MOSFETs are reported in detail. The gate oxide thickness and supply voltage dependencies were investigated. In addition, NMOS LNA (low noise amplifier) circuits made with 1.5 nm gate oxide MOSFETs were evaluated for the first time. Good RF analog circuit operation with very low noise and high gain was confirmed.
Keywords :
MOS analogue integrated circuits; MOSFET; integrated circuit noise; millimetre wave amplifiers; millimetre wave integrated circuits; semiconductor device noise; 0.1 mum; 1.5 nm; 150 GHz; NMOS LNA circuit; RF analog circuit operation; RF noise; RF noise characteristics; Si-SiO/sub 2/; analog applications; chip; cutoff frequency; direct tunneling gate oxide MOSFETs; gate length; gate oxide MOSFETs; gate oxide thickness; high RF performance; high gain; low noise; low noise amplifier circuits; supply voltage dependencies; Analog circuits; Circuit noise; Cutoff frequency; Low-noise amplifiers; MOS devices; MOSFETs; Radio frequency; Radiofrequency amplifiers; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689214
