Title :
MOCVD growth and properties of thin AlxGa1-xN layers on GaN
Author :
Parish, G. ; Keller, S. ; Fini, P.T. ; Vetury, R. ; Chen, C.H. ; DenBaars, S.P. ; Mishra, U.K. ; Wu, Y.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The effect of growth conditions on the morphological and electrical properties of thin AlGaN layers on GaN has been studied. High two-dimensional-electron-gas (2DEG) mobilities of up to 1400 cm2 /Vs were obtained. The morphological and electrical (2DEG) quality strongly depended on the aluminium content. Also, growth on Laterally Epitaxially Overgrown GaN was investigated
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; crystal morphology; electron mobility; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; vapour phase epitaxial growth; wide band gap semiconductors; 2DEG; AlGaN; GaN; MOCVD growth; electrical properties; electron mobilities; morphological properties; thin AlxGa1-xN layers on GaN; two-dimensional-electron-gas; Aluminum gallium nitride; Atomic force microscopy; Gallium nitride; Inductors; Instruments; Low earth orbit satellites; MOCVD; Surface morphology; Temperature dependence; X-ray diffraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791694
