DocumentCode
3139654
Title
A novel step stack NOR cell for low voltage flash
Author
Ogura, S. ; Hori, A. ; Kato, J. ; Odanaka, S. ; Akamatsu, K. ; Yamanaka, M. ; Kojima, M. ; Kotani, H.
Author_Institution
Halo LSI Inc., Wappingers Falls, NY, USA
fYear
1998
fDate
9-11 June 1998
Firstpage
106
Lastpage
107
Abstract
In a stack NOR flash cell, a small vertical (step) channel has been added to the conventional horizontal channel, to reduce the operating voltages for CHE injection and FN ejection. Devices and processes have been optimized based on extensive 2D simulations, with hardware results showing a 1-1.5 V reduction in the drain voltage requirement, and more than one order of magnitude increase in injection efficiency.
Keywords
NOR circuits; flash memories; integrated circuit modelling; integrated logic circuits; integrated memory circuits; semiconductor process modelling; 2D simulations; CHE injection; EPROM; FN ejection; drain voltage; horizontal channel; injection efficiency; low voltage flash; operating voltages; stack NOR Flash cell; step stack NOR cell; vertical step channel; Boron; Channel hot electron injection; Flash memory cells; Hardware; Large scale integration; Low voltage; Nonvolatile memory; Scalability; Ultra large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689218
Filename
689218
Link To Document